| PART |
Description |
Maker |
| AHV1001 AHV1004 |
SILICON HYPERABRUPT TUNING VARACTOR
10 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
ADVANCED SEMICONDUCTOR INC
|
| SMV1770-079LF |
Hyperabrupt Junction Tuning Varactors S BAND, 23.6 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Skyworks Solutions, Inc.
|
| Q62702-B195 BBY35F Q62702-A775 |
From old datasheet system
Silicon Tuning Varactor (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V)
Silicon Tuning Varactor (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ˇ 12 V)
Silicon Tuning Varactor (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ?12 V)
SCREWDRIVER SET, 7 PCSCREWDRIVER SET, 7 PC; Kit contents:Slotted 75 4mm, 100 5.5mm, 150 6.5mm, Parallel 75 3mm, Phillips 60 No.0, 80 No.1, 100 No.2
Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high-speed switching) 硅肖特基二极管（搅拌机应用甚高频/超高频范围高速开关）
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| KV2101 KV2001 KV2501-15 KV2501-00 KV2801 KV2801-30 |
VARACTOR DIODES HF/VHF/UHF Hyperabrupt Junction
UHF BAND, 50 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 200 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 155 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| BBY52-03W |
Silicon High Q Hyperabrupt Dual Tunin...
|
Infineon
|
| BBY51-02L BBY51 BBY51-03W BBY51-02W |
Silicon Tuning Diode
Varactordiodes - Silicon high Q hyperabrupt tuning diode
Varactordiodes - Silicon high Q hyperabrupt dual tuning diode
|
INFINEON[Infineon Technologies AG]
|
| SMV1233-011LF SMV1235-011LF |
Hyperabrupt Tuning Varactors S BAND, 3.3 pF, 15 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
Hyperabrupt Tuning Varactors S BAND, 11.5 pF, 15 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Skyworks Solutions, Inc.
|
| M74HC4852B1R M74HC4852MW M74HC4852MWR |
DUA 4:1 CHANNEL ANALOG MUX/DMUX WITH INJECTION CURRENT PROTECTION
|
ST Microelectronics
|
| GC1310 KV1963A KV1953A KV1923A KV1913A1 KV2123 KV1 |
C BAND, 3.9 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 0.8 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 0.8 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
ENHANCED PERFORMANCE SURFACE MOUNT EPSM垄芒Hyperabrupt Varactor Diodes TM
ENHANCED PERFORMANCE SURFACE MOUNT EPSM?⑷yperabrupt Varactor Diodes TM
ENHANCED PERFORMANCE SURFACE MOUNT EPSM?Hyperabrupt Varactor Diodes TM
C BAND, 16.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 1.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| Q62702-B257 BBY34D Q62702-B194 BBY34C |
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ˇ 12 V) 硅调谐变容二极管（Hyperabrupt交界调谐二极管频率线性调谐范 12五）
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Forward Current:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V)
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ?12 V)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BBY51-02W Q62702-B0858 BBY5102W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Low series inductance) 硅调谐二极管（高Q hyperabrupt调谐二极管低串联电感
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| Q62702-B916 BBY58-02W BBY5802W |
From old datasheet system
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
|
Siemens Group
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
